Hexton Technologies

The 2N6292 is a silicon NPN transistor in a TO-220 type package designed for use in general purpose amplifier and switching applications.

The 2N6107 is a silicon PNP transistor in a TO-220 type package designed for use in general purpose amplifier and switching applications.

MJE2955/MJE3055 The PNP transistor is a type of transistor in which one n-type material is doped with two p-type materials.

The CENTRAL SEMICONDUCTOR BC846, BC847 and BC848 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications

The BC857 is a general purpose PNP Transistor with low voltage and current. Designed for use with general purpose amplification and switching applications.

The 2SD882 is a 30V NPN medium power Transistor manufactured by using planar technology resulting in rugged high performance devices. 

2SB772 is a PNP transistor manufactured by using planar Technology resulting in rugged high-performance devices. 

Additional Information:

• Production Capacity: 100000
• Delivery Time: IN STOCK
• Packaging Details: CORRUGATED BOXES

• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 
•  This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant

Additional Information:

• Production Capacity: 100000
• Delivery Time: IN STOCK
• Packaging Details: CORRUGATED BOXES

The ULN2001, ULN2002, ULN2003 and ULN 2004 are high-voltage, high-current Darlington arrays each containing seven open collector Darlington pairs with common emitters. 

The ULN2803A is a high-voltage, high-current Darlington transistor array. The device consists of eight npn Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The collector-current rating of each Darlington pair is 500 mA.

The device features open-collector outp uts with suppression diodes for inducti ve loads and is ideally suited for inte rfacing between low-level logic circuit ry and high power loads.